In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 31, No. 1 ( 2013-01-01)
Abstract:
InGaN/GaN vertical light emitting diodes (LEDs) with argon (Ar) and oxygen (O2) plasma-treated nonalloyed Al/Ti electrodes were fabricated on sapphire substrates. At the operating current of 350 mA, the forward voltage (VF) for O2 plasma-treated Al/Ti-based devices with dimensions 1360 × 1360 μm2 was improved, whose value was comparable or lower to that of nonalloyed Cr/Au-based devices. The Al/Ti electrodes resulted in improvement in optical output power of LEDs due to their high reflectivity (typically 10%–15% higher based on our data) compared to LEDs with conventional Cr/Au-based electrodes. The x-ray photoelectron spectroscopy showed the increase in Ga-O peak intensity during O2 plasma treatment. These results demonstrate that O2 plasma-treated Al/Ti electrodes reduced the contact resistance by forming a thin conductive GaOxN1−x layer at n-GaN surface.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2013
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
