In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 2, No. 2 ( 1984-04-01), p. 487-491
Abstract:
The reaction of Si with Cl2 alone and under simultaneous exposure to an Ar+ ion beam is investigated as a function of target temperature and Ar+ ion energy using mass spectrometry and time-of-flight studies. The main products of the thermal reaction are SiCl4 at low and SiCl2 at higher temperatures. The main products of combined exposure are atomic Si and Cl and molecular SiCl and SiCl2. The contributions of atoms and molecules are of a comparable order of magnitude. It appears that the main fraction of the products of the combined exposure results from sputtering and not from stimulation of the thermal reaction path by ion bombardment. The results strongly suggest that a modification of the top atomic layers of the Si, from which the products are sputtered, by incorporation of significant quantities of Cl plays a dominant part in the reaction mechanism.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1984
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
