In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 15, No. 4 ( 1997-07-01), p. 2081-2084
Abstract:
Surface charging and electron trapping in ultrathin (1.6 nm) SiO2 films on n-type silicon during bombardment by 350–600 eV electrons are observed by electric-field-induced optical second harmonic generation (SHG). Transient surface charging by fast dissipating electrons ( & lt;1 ms charge/discharge time) can be distinguished from oxide electron trapping occurring over hundreds of seconds. The maximum SHG enhancement corresponds to an areal density of trapped electrons of ∼6×1012 cm−2. The gradual recovery of the SHG following electron bombardment suggests the trap sites are “slow traps”, i.e., oxide traps which discharge via tunneling to the Si/SiO2 interface. The effective trap lifetime is about 500 s.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1997
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
