In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 6, No. 1 ( 1988-01-01), p. 34-36
Kurzfassung:
The lattice mismatch and the half-width of the rocking curves in GaInAsP epitaxial layers grown on (001) InP substrates have been determined by means of x-ray double-crystal diffractometry. The state of strain of GaInAsP epitaxial layers has also been investigated. The relaxed lattice constant of the epilayers in stress-free states has been found from observed lattice deformation using strain relations.
Materialart:
Online-Ressource
ISSN:
0734-211X
,
2327-9877
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1988
ZDB Id:
3117331-7
ZDB Id:
1475429-0