In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 6, No. 3 ( 1988-05-01), p. 1006-1009
Abstract:
We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base, respectively. The implants of B+, P+, and P++ were all at a dose of 1×1013 /cm2 and a beam voltage of 75 kV. These implants defined spaces between the emitter and collector regions of 0.5–1.50 μm; which, after diffusion and zero voltage depletion width effects were considered, produced effective on-wafer device basewidths of ∼0.2 μm. For the best devices, values of hFE near 100 were obtained with good junction characteristics and at peak collector currents of 10 μA/μm of device width.
Type of Medium:
Online Resource
ISSN:
0734-211X
,
2327-9877
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1988
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0