In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 7, No. 5 ( 1989-09-01), p. 1103-1105
Abstract:
GaAs layers grown by molecular-beam epitaxy (MBE) have been postgrowth hydrogenated by implanting low-energy hydrogen ions with a Kaufman source. Changes in the concentration of deep and shallow levels have been studied by DLTS and C–V measurements, respectively, for different hydrogen doses. A close match is obtained between the present results and those obtained for GaAs grown by the same MBE machine in hydrogen backpressure. Therefore, it is concluded that MBE growth with hydrogen results in hydrogen incorporation in the layers, and hence, in the passivation of shallow and deep levels.
Type of Medium:
Online Resource
ISSN:
0734-211X
,
2327-9877
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1989
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0