In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 3 ( 1995-05-01), p. 1358-1363
Kurzfassung:
Single-crystal epitaxial layer ohmic contacts are very promising in the fabrication of shallow junction nanoelectronic and mesoscopic devices based on III–V compounds. A single-crystal Ge film is grown epitaxially on GaAs or InGaP lattice matched to GaAs and a Au or Pd layer is deposited on top of it using an ultrahigh vacuum (10−9–10−10 Torr) electron beam (UHV e-beam) deposition system. The interface between the Ge and thermally cleaned GaAs or InGaP is almost atomically abrupt, smooth, and oxide free, and there is a minimum of disruption of the underlying layers. When deposited at an appropriate temperature, the metals are highly oriented and have large grains. They can be diffused through the Ge film to initiate the formation on an ohmic contact in a controlled manner. A detailed analysis of interface quality, crystal structure and defect propagation in GaAs/Ge/Au, GaAs/Ge/Pd, InGaP/Ge structures is presented. High-resolution transmission electron microscopy, double-crystal x-ray diffraction, Rutherford backscattering spectroscopy, and Auger electron spectroscopy were used to characterize the materials.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1995
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
