In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 4 ( 1995-07-01), p. 1582-1584
Kurzfassung:
A modified molecular beam epitaxy technique has been used to grow single barrier GaAs/GaN/GaAs heterostructures of both n- and p-type. The temperature-dependent I(V) measurements show thermally activated conduction over the barrier above about 200 K. A Type I band alignment is indicated by significant offsets in both the conduction and valence bands at the GaAs/GaN heterointerface.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1995
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
