In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 14, No. 6 ( 1996-11-01), p. 4051-4054
Kurzfassung:
We present a 0.10 μm n-type metal–oxide–semiconductor process to achieve devices with reduced short channel effect (SCE) and good current drive capability. Full compatible chemical amplified resist process between deep ultraviolet and electron-beam lithography allowed us to use hybrid lithography at gate level. For the first time, we show that the conventional gate reoxidation is a limiting step to process integration because of the bird’s beak formation at the poly-gate edge. Consequently, this process is replaced by a low thermal oxide deposition. In addition, indium and gallium pocket implantations have been realized to improve the SCE control.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1996
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0