In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 17, No. 5 ( 1999-09-01), p. 2325-2330
Abstract:
The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the interaction between MSQ and copper is worth investigating. In this work, we have studied the H2 plasma treatment to improve the quality and enhance the copper penetration resistance of MSQ. Experimental results show the leakage current of MSQ decreases as the H2 plasma treatment time is increased. The dielectric constant of treated samples also remains constant (∼2.7). In addition, the copper diffusion resistance of MSQ film is significantly promoted. The H2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film as well as reduce the probability of moisture uptake and interaction with Cu atoms. Therefore, the low-k dielectric properties of MSQ are significantly enhanced by H2 plasma treatment.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1999
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
