In:
Science, American Association for the Advancement of Science (AAAS), Vol. 349, No. 6248 ( 2015-08-07), p. 625-628
Kurzfassung:
Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T’) molybdenum ditelluride (MoTe 2 ) that is stable up to 300°C and increases the carrier mobility of the MoTe 2 transistor by a factor of about 50, while retaining a high on/off current ratio of 10 6 . In situ scanning transmission electron microscopy results combined with theoretical calculations reveal that the Te vacancy triggers the local phase transition in MoTe 2 , achieving a true 2D device with an ohmic contact.
Materialart:
Online-Ressource
ISSN:
0036-8075
,
1095-9203
DOI:
10.1126/science.aab3175
Sprache:
Englisch
Verlag:
American Association for the Advancement of Science (AAAS)
Publikationsdatum:
2015
ZDB Id:
128410-1
ZDB Id:
2066996-3
ZDB Id:
2060783-0
SSG:
11