In:
International Journal of High Speed Electronics and Systems, World Scientific Pub Co Pte Ltd, Vol. 14, No. 01 ( 2004-03), p. 175-195
Kurzfassung:
AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.
Materialart:
Online-Ressource
ISSN:
0129-1564
,
1793-6438
DOI:
10.1142/S0129156404002296
Sprache:
Englisch
Verlag:
World Scientific Pub Co Pte Ltd
Publikationsdatum:
2004
