In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 17, No. 08n09 ( 2003-04-10), p. 1183-1187
Kurzfassung:
For the defective semiconductor SnO 2 thin film epitaxially grown on sapphire, height-height correlation functions are evaluated from x-ray scattering and atomic force mi-croscopy(AFM) by a quick method. The small value [Formula: see text] implies that the interfaces are fairly well correlated. This is consistent with the well-defined oscillation in the longitudinal diffuse scattering intensity.
Materialart:
Online-Ressource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S0217979203018715
Sprache:
Englisch
Verlag:
World Scientific Pub Co Pte Ltd
Publikationsdatum:
2003