In:
Modern Physics Letters B, World Scientific Pub Co Pte Ltd, Vol. 36, No. 18 ( 2022-06-30)
Kurzfassung:
A radio-frequency magnetron sputter was used to deposit a 60 nm TiO[Formula: see text] film on a W-coated Si substrate at room temperature. Subsequently, a 100 nm Ni film was deposited using a thermal evaporator to form a Ni/TiO[Formula: see text] /W structure. Numerous oxygen vacancies and defects were present in the TiO[Formula: see text] film. The current–voltage characteristics indicate that Schottky emission dominated the conduction mechanism of the Ni/TiO[Formula: see text] /W structure. Because of Schottky barrier modulation, analog resistive switching of the Ni/TiO[Formula: see text]/W structure can be performed using consecutive voltage sweepings or voltage pulses. Various pulse waveforms were used to demonstrate synaptic potentiation and depression.
Materialart:
Online-Ressource
ISSN:
0217-9849
,
1793-6640
DOI:
10.1142/S0217984922420386
Sprache:
Englisch
Verlag:
World Scientific Pub Co Pte Ltd
Publikationsdatum:
2022
