In:
Journal of Nonlinear Optical Physics & Materials, World Scientific Pub Co Pte Ltd, Vol. 05, No. 01 ( 1996-01), p. 25-32
Abstract:
Narrow-band mid-infrared electroluminescence associated with internal transitions of metal impurities embedded in semiconductors following the impact ionization of the latter is reported. We have demonstrated this phenomenon for Fe 2+ deep acceptors in InP. At 10 K the spectrum is dominated by a set of sharp lines at 3.5 µm, corresponding to the symmetry allowed ( 5 T 2 → 5 E) d-shell transitions of Fe 2+ . Optical power up to ≈40 nW has been measured.
Type of Medium:
Online Resource
ISSN:
0218-8635
,
1793-6624
DOI:
10.1142/S0218863596000040
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
1996