In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 23, No. 6A ( 1984-06-01), p. L357-
Abstract:
The thickness of SiO 2 capping layers has been varied to suppress agglomeration and surface rounding of germanium layers on SiO 2 during zone melting recrystallization. It was found that SiO 2 capping with a thickness of more than 1 µm could suppress agglomeration and surface rounding successfully and most of the islands were single crystalline with flat surfaces. The predominant orientation of germanium islands was found to be (100).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.23.L357
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1984
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7