In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 7A ( 1986-07-01), p. L534-
Abstract:
A deep level in S-doped Ga 0.52 In 0.48 P grown on GaAs by chloride vapor-phase epitaxy was studied by deep-level transient spectroscopy (DLTS). The deep level concentration obtained by DLTS is increased with donor doping intensity as also the case for the obtained by persistent photoconductivity. The energy of this level strongly depends on thermal and optical ionization processes. These properties are the same as those of the DX center. However, the deep level concentration is considerably smaller than that in Al x Ga 1- x As(0.3 〈 x 〈 0.7), which makes Ga 0.52 In 0.48 P favorable for heterostructure electron devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.L534
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
