In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 9R ( 1987-09-01), p. 1408-
Abstract:
The light-induced effect of a-Si films with low impurity concentrations fabricated in the super chamber was investigated. It was confirmed that a reduction of impurity reduces the light-induced effect over a range of more than 10 18 cm -3 for oxygen. Furthermore, other factors come to have an influence on the light-induced effect in the low-impurity region. We believe that there are at least two types of light-induced defects, one related to impurities, which may be located below the midgap, and one related to structural properties, which may be located around the midgap. For a further reduction of the light-induced degradation in a-Si films, it is necessary to reduce the impurities in a-Si films and to suppress the creation of dangling bonds around the midgap.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.1408
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7