In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 10R ( 1989-10-01), p. 1762-
Abstract:
The influence of the Si-H 2 bond on light-induced degradation and the thermal recovery of a-Si films and a-Si solar cells were studied. The influence of the Si-H 2 bond on light-induced degradation depends on the impurity content in a-Si films, and light-induced degradation can be reduced by decreasing the Si-H 2 bond density in a-Si films with impurity content of 10 18 cm -3 . The activation energy of the thermal recovery process was about 1.0 eV, and it did not depend on the Si-H 2 bond density. However, an irreversible phenomenon was observed in film properties and solar cell characteristics with high Si-H 2 bond density. It is thought that the structural flexibility of the Si-H 2 bond is related to this irreversible phenomenon.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.28.1762
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7