In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 10A ( 1989-10-01), p. L1737-
Abstract:
InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency ( f T ) of 52 GHz is achieved in the HBT's with a base thickness of 1000 Å. A decrease in f T under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.28.L1737
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7