In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 1A ( 1989-01-01), p. L4-
Abstract:
AlAs and AlGaAs were successfully grown by a directly reacting of AlCl 3 , GaCl 3 and AsH 3 for the first time. The AlCl 3 and GaCl 3 were contained in stainless steel evaporators (60°C–120°C), and supplied by He carrier gas. The AsH 3 (10% in H 2 ) was supplied directly to the deposition zone by H 2 carrier gas during the growth. The AlAs layers could be grown in the temperature range from 550°C–700°C, and a maximum growth rate of 3.5 µm/h was obtained. The AlGaAs was grown at 600°C, with a typical growth rate of about 2 µm/h. The Al content was controlled in the entire composition range but was not linearly proportional to the Al content in the supplied gas. These results suggest the possibility of new carbon-free gas sources for the chemical beam epitaxy (CBE) and atomic layer epitaxy (ALE).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
