In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 6A ( 1990-06-01), p. L943-
Kurzfassung:
The conditions for increasing the fraction of the 2223 phase in BiSrCaCuO films in the Pb vapor doping method were investigated. The optimum range for the growth of the 2223 phase was determined as a function of annealing condition and film thickness. It is shown that the annealing at 835°C for 5 to 12 h after 850°C×3 h annealing in Pb atmosphere is most effective in obtaining the impurity-free 2223 phase. The fraction of the 2223 phase thus obtained exceeded 99%.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.L943
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1990
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
