In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 6R ( 1991-06-01), p. 1154-
Abstract:
This paper proposes a new wafer thinning method in bonding silicon-on-insulator (SOI) technology. With this new method, thermal oxidation is performed on thin boron-doped Si films after highly selective back-etching to reduce the boron concentration in the film. The boron concentration in the silicon layer on oxide can be decreased more than 2 figures under proper thermal oxidation conditions. A 90-nm-thick silicon layer with 4×10 17 /cm 3 boron concentration was formed on an insulator by this method. Transmission electron microscope (TEM) observation shows that the silicon layer has a highly crystalline quality. It is also found that the reflow of borophosphosilicate glass (BPSG) can effectively fill in the small surface gaps during wafer bonding.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.1154
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
