In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 7R ( 1991-07-01), p. 1452-
Kurzfassung:
An inelastic electron tunneling spectroscopy (IETS) technique is employed to investigate Langmuir-Blodgett monolayers deposited on silicon substrates. Thermally formed SiO 2 layers are used as a tunneling barrier to obtain reliable and sensitive signals. IETS data, which are compared to IR and Raman data, show the stability and chemical reactions of organic monolayers at the metal or SiO 2 interface.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.1452
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1991
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7