In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 11R ( 1991-11-01), p. 2956-
Abstract:
The characteristics of aluminum etch rate uniformity across a wafer were studied using a parallel-plate reactive ion etching apparatus. The etch rate uniformity was found to be affected by the process gases, the cover materials of the cathode, the rotation of the cathode and the gas inlet positions. Results indicated that it was difficult to improve the uniformity under the condition of the etchant being distributed uniformly over the cathode. In order to obtain good uniformity, the etchant must be confined on the wafer surface. Procedures to improve the etch rate uniformity are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.2956
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
