In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 11S ( 1991-11-01), p. 3058-
Abstract:
X-ray mask fabrication techniques, which are used in X-ray lithography for 0.25-µm devices, are studied in this paper. Initially, the process latitude for both the single- and trilayer processes is discussed according to the simulation results. The bottom layer thickness in the trilayer process was optimized to reduce the influence of backscattered electrons, and a proximity effect correction was introduced for the 0.25-µm pattern fabrication. In order to suppress membrane heating, a reverse-side polyvinyl alcohol (PVA) coating method was developed. The temperature was monitored with a special thermometer, and the effectiveness of the PVA coating was examined.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.3058
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
