In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 12S ( 1991-12-01), p. 3733-
Kurzfassung:
This paper investigates the role of silane partial pressure ( P SiH 4 ) in VLPCVD on the as-deposited poly-Si film quality. The film quality strongly depends on the P SiH 4 when deposition temperature is kept constant. Higher pressure and excessively lower pressure have been found to be not adequate for thin film transistors (TFTs). By optimizing the deposition conditions, excellent TFTs can be fabricated through a low temperature process without relying on any other special processes. This paper also suggests the possibility of further improvement of as-deposited poly-Si films.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.3733
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1991
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7