In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 12S ( 1991-12-01), p. 3802-
Abstract:
Undoped and Zn-doped Cu-Al-Se films have been grown on GaAs(100) substrates by molecular beam epitaxy, and their optical and electrical properties have been characterized. The compositions of grown films are about 50 at%Cu, 10 at%Al and 40 at%Se, and single-crystal films are obtained. The photoluminescence spectrum of an undoped film exhibits a blue emission at 77 K and room temperature. The undoped film annealed at 550°C for 16 h shows p-type conductivity with the resistivity of 6.9×10 -3 Ω·cm, the carrier concentration of 2.5×10 18 cm -3 and the mobility of 370 cm 2 ·V -1 ·s -1 . Zn-doped as-grown film shows n-type conductivity. These characteristics suggest the possibility of p-n junction optical devices fabricated with the novel Cu-Al-Se films. On the other hand, the current-voltage characteristic of Cl-doped ZnSe/undoped Cu-Al-Se/ p-GaAs exhibits a rectifying characteristic with the turn-on voltage of 2.7 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.3802
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
