In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 1A ( 1991-01-01), p. L11-
Kurzfassung:
This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are in agreement with the measurement data.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1991
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7