In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 8B ( 1991-08-01), p. L1454-
Kurzfassung:
We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an Al x Ga 1- x As ( x =0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1454
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1991
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
