In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 9A ( 1991-09-01), p. L1605-
Abstract:
A fabrication method of thin single-crystalline silicon wires on SiO 2 is reported. The wires are fabricated by anisotropic wet etching of (110) and (100) SOI wafers. We obtained a thin (110) SOI wire of 0.2 µm width and 0.2 µm height with a rectangular cross section. Since the (110) SOI wires are enclosed by a pair of ultraflat {111} side walls parallel to each other, this method has the potential to form ultranarrow wires by careful control of the etching conditions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1605
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7