In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 9B ( 1991-09-01), p. L1689-
Abstract:
Scanning electron microscopy & total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50 Å- and 125 Å-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125 Å-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t =0°-3°, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81°). In addition, the intensity of the AuM line emitted from the 50 Å-thick Au thin film was also sufficiently strong for chemical analysis.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1689
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
