In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 10A ( 1991-10-01), p. L1718-
Abstract:
We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) on 3-inch GaAs substrates. In the drain current-voltage characteristics, sharp pinch-off and excellent saturation were observed for HEMTs grown using tBAs as well as using arsine. A transconductance of 324 mS/mm and the K-factor of 418 mA/V 2 /mm were obtained using tBAs for n-AlGaAs/GaAs HEMTs with a 0.5-µm gate, while those for n-AlGaAs/InGaAs/GaAs pseudomorphic HEMTs were 350 mS/mm and 480 mA/V 2 /mm. These results verify that GaAs, AlGaAs, and InGaAs layers grown using tBAs are of sufficiently high quality for HEMT applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1718
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7