In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 11A ( 1991-11-01), p. L1902-
Abstract:
According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored charge during magnetized high-density plasma etching becomes a serious problem. The gate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the uneven magnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the gate oxide degradation during electron cyclotron resonance (ECR) plasma etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1902
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7