In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 6A ( 1991-06-01), p. L956-
Abstract:
We studied exciton transitions and the band structure of (GaP) n (GaAs) n /GaAs [001] superlattices for n =1-4, using reflectance and photoluminescence spectral measurements. The exciton-transition energy showed a prominent drop for n =1 by 90 meV for n =2-4. This was attributable to the intensified delocalization of Γ electrons in the GaAs well by tunneling through the extremely thin GaP barrier layers. The transition was defined as direct for n =1, but indirect for n =2-4 by comparing the energies of exciton absorption and photoluminescence emission from the lowest excited state.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L956
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7