In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 6R ( 1992-06-01), p. 1860-
Abstract:
Single-crystal Al(110) films were deposited on Si(100) substrates 4 degrees off toward [01̄1̄] and single crystal Al(111) films were deposited on Si(111) substrates 3 degrees off toward the nearest [110] by DC magnetron sputtering deposition. In the formation of single-crystal aluminum films, both the buffered HF solution cleaning procedure for removing the SiO 2 layers on the silicon substrates and the offset angle of the silicon wafers are indispensable. Without buffered HF solution cleaning, polycrystal Al(111) films were deposited. Without the offset angle, a bicrystal Al(110) preferred-orientation structure was deposited. Optical reflectance, scanning electron microscopy and X-ray diffraction were used to evaluate the film properties.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.1860
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
