In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 8R ( 1992-08-01), p. 2407-
Abstract:
We have confirmed the existence of a new Cu-Al-Se phase grown by molecular beam epitaxy. The phase possesses a crystal structure equivalent to the tetragonal structure compound Cu 5 FeS 4 found in the Cu-Fe-S system, and has a direct band gap of around 3.1 eV at room temperature. The new Cu-Al-Se phase clearly differs from the chalcopyrite structure compound CuAlSe 2 , and is considered to be a Cu 5 AlSe 4 compound.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.2407
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7