In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 4R ( 1992-04-01), p. 995-
Abstract:
Transient light-induced electron spin resonance (LESR) at 120 K has been used to investigate the light-soaking behaviors and the role of hydrogen in the stability of a-Si:H through changes in the lineshape. Dramatic changes occur in the LESR lineshape upon prolonged light-soaking, and we suggest that hydrogen defects (Si-H 2 or clustered Si-H bonds) play an important role in these changes. A microscopic explanation of the possible optical excitations and defect conversion processes leading to these changes during the LESR experiment is proposed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7