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  • 1
    Online Resource
    Online Resource
    IOP Publishing ; 1992
    In:  Japanese Journal of Applied Physics Vol. 31, No. 9A ( 1992-09-01), p. L1216-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 9A ( 1992-09-01), p. L1216-
    Abstract: The properties of Si surfaces treated in HF solution of various concentrations are characterized by photoluminescence (PL). The Si surfaces treated in 4.5%-HF solution show higher PL intensity than thermally oxidized Si, indicating low surface recombination velocity of the HF-treated Si surface. The effect of ambient gases on HF-treated Si surfaces is studied. The temporal variation of PL intensity is such that it shows an abrupt rise in nitrogen followed by saturation, and the saturated intensity shows only a slight change with time. In air or in oxygen, HF-treated Si shows a gradual or fast rise in PL intensity followed by saturation for a short period and the PL intensity eventually decreases with time presumably due to generation of recombination centers. It is suggested that the oxidation of HF-treated Si induces the formation of recombination centers at the surface.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
    RVK:
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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