In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 10A ( 1992-10-01), p. L1396-
Kurzfassung:
Undoped and As-doped CuAlS 2 films have been grown on GaAs(100) substrates by molecular beam epitaxy, and their optical and electrical properties have been characterized. X-ray diffraction patterns show that the films grow epitaxially with the c -axis perpendicular to the substrate surface. Both undoped and As-doped CuAlS 2 films have exhibited a near-band-edge emission around 3.4 eV with accompanying deep-level-related emissions at 77 K. An As-doped CuAlS 2 film exhibits p-type conductivity with the lowest resistivity of 1 Ω·cm and the carrier concentration of 5×10 17 cm -3 .
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L1396
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1992
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
