In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 2A ( 1992-02-01), p. L63-
Kurzfassung:
The simultaneous zone melting recrystallization of two stacked silicon layers is reported. Branching subgrain boundaries were revealed in the bottom film. Considerably more subtle, straight, parallel, non-branching defect trails were observed in the top layer. The present experiments prove that previous models that attribute this difference to the macroscopic in-plane thermal stress field cannot account for this large difference. The typical defect structure obtained in the top film is thought to be (directly) related to the radiative type of heating applied to this top layer.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1992
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
