In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 5R ( 1993-05-01), p. 1919-
Kurzfassung:
Current-voltage characteristics of p-InGaAlP/p-GaAs heterojunctions have been investigated. A heterospike at the heterointerface of InGaAlP/GaAs generated a large voltage drop, which strongly depended on the Al composition and the acceptor concentration of InGaAlP layer. Insertion of an intermediate layer of InGaP, which had an intermediate band gap between those of InGaAlP and GaAs, significantly reduced the voltage drop by an order of 10 3 . These experimental results were in good agreement with the theoretical calculation accounting for a large valence band discontinuity between InGaAlP and GaAs.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.1919
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1993
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
