In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6R ( 1993-06-01), p. 2814-
Abstract:
Ga dots on a nanometer scale were deposited using a scanning tunneling microscope (STM) through the decomposition of triethylgallium (TEGa) adsorhed on HF-treated Si(111) surfaces. The deposition of Ga dots of 2-13 nm in diameter was achieved by applying a negative voltage pulse to the sample, while no deposition was observed when a positive voltage pulse was applied. The conditions for Ga deposition were systematically investigated by varying the gap conductance, pulse height and pulse width. A tentative model for the mechanism of Ga deposition is proposed, in which TEGa molecules are decomposed by the electric field betwecn the tip and the sample.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.2814
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7