In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 8R ( 1993-08-01), p. 3376-
Abstract:
Our previous results of light-induced electron spin resonance (LESR) indicate that, in hydrogenated amorphous silicon (a-Si:H), light-induced defects differ from those formed during deposition or high-temperature annealing. The concept of demarcation was used to interpret these differences in terms of higher energy levels for light-induced defects. In this study, the constant photocurrent method (CPM), dark conductiviry and transient-LESR are used to supply new evidence for the differences and to conduct two tests on our hypothesis. The demarcation energies for electrons and holes are shifted by varying the temperature or bias-light intensity for transient-LESR. In striking agreement with our hypothesis, we find that the light-induced changes in the LESR line shape (an increase in the broad component relative to the narrow one upon light exposure) become indeed more dramatic as the demarcation energies move closer to the midgap.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.3376
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7