In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 362-
Kurzfassung:
The effect of gate materials on hot-carrier degradation, especially on the generation of the interface state, is investigated. The generation of the interface state in n-channel metal-oxide-semiconductor field-effect transistors (NMOSFET's) by drain avalanche hot-carrier (DAHC) injection is independent of the gate material. On the other hand, the generation of the interface state in p-channel MOSFET's (PMOSFET's) by DAHC injection is greatly dependent on the gate material but almost independent of the channel doping profile, in other words, a surface- or buried-channel device. The increase in interface state density (Δ D it ) in tungsten (W)-gate PMOSFET's is much larger than that of polycide-gate devices. In order to verify the effect of carrier species injected into SiO 2 , electrons were injected from the substrate into the gate electrode by two methods: Fowler-Nordheim injection and hot-electron injection from the forward biased p-n junction injector. The large Δ D it in W-gate devices is observed in both methods. It is confirmed that the large Δ D it in W-gate PMOSFET's stressed by DAHC injection is caused by the injection of electrons into SiO 2 . These phenomena are considered to occur due to the difference of hole injection from the gate into SiO 2 , excited at the gate by electron injection, between gate materials.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1993
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
