In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10A ( 1993-10-01), p. L1380-
Abstract:
In situ spectrum measurement by surface photo-absorption (SPA) is applied to study the Ga deposition process on (001) GaAs in metal-organic chemical vapor deposition (MOCVD). The change in SPA spectra is measured in the wavelength range from 300 nm to 800 nm, when triethylgallium is supplied on As-stabilized surface. The change at 470 nm is caused by the disappearance of the uppermost As dimer of c (4×4) surface followed by the appearance of a (2×4) As dimer domain or the formation of Ga-As back bonds. A broad spectrum from 500 nm to 800 nm is observed after one-monolayer Ga deposition, implying a correlation with Ga droplet formation. The calculated spectrum supports this broad spectrum being due to the photo-absorption by free Ga atoms on Ga-stabilized surface or metallic Ga atoms included in droplets.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1380
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
