In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 11A ( 1993-11-01), p. L1612-
Abstract:
We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD). The threshold current was 3.2 mA. By observing the spontaneous emission through DBRs, we found that transverse mode behavior depends on gain characteristics. Single fundamental transverse-mode lasing is achieved at a negative gain offset and multiple transverse-mode lasing is achieved at a positive gain offset.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1612
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7