In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 11A ( 1993-11-01), p. L1627-
Kurzfassung:
Selective gas source molecular beam epitaxy (gas source MBE) growth of high-quality InGaAs/InP layers on mask-patterned InP substrates is demonstrated for the first time with atomic hydrogen irradiation. A decrease in polycrystalline density of over 3 orders of magnitude is achieved for InP selective growth by atomic hydrogen irradiation. The selective growth of high-quality InGaAs/InP multiple quantum-well (MQW) structures is also demonstrated. Photoluminescence (PL) spectroscopy indicates that the peak-wavelength of she MQW structure does not depend on the mask stripe width, but significant peak-wavelength dependence on the stripe spacing width was observed.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1627
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1993
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
