In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 2B ( 1993-02-01), p. L236-
Abstract:
We developed a novel growth technique for AlAs on GaAs and Si substrates at a low temperature of 150°C. The low-temperature growth was achieved using atomic layer epitaxy (ALE) with trimethylamine alane as a group III source. Layer-by-layer growth of one monolayer per ALE cycle with a self-limiting effect was obtained on both substrates. Surface morphology of GaAs on Si was improved by the use of this AlAs as a buffer layer. The degradation of crystal quality, expected due to the growth of the GaAs active layer on the low-temperature buffer layer, did not occur.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L236
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7