In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 3B ( 1993-03-01), p. L438-
Abstract:
By introducing methane as a sheath gas and by reducing the reactor chamber pressure to 150 Torr in an rf induction thermal plasma chemical vapor deposition (CVD) method, a large volume of the thermal plasma was stabilized and elongated to reach far into the reactor chamber where a molybdenum substrate was placed. This made it possible to deposit diamond films uniformly on a substrate as large as 100 mm in diameter at a high deposition rate of 30 µm/h. This deposition area is the largest one of diamond films ever deposited by the rf induction thermal plasma CVD method.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L438
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
